4H-, 6H-SiCの安定性に及ぼす不純物アルミニウムの影響

• 三友 護

  科学技術庁無機材質研究所

• 猪股 吉三

  科学技術庁無機材質研究所

• 熊埜御堂 真士

  科学技術庁無機材質研究所

書誌事項

タイトル別名

• The Effect of Doped Aluminium on Thermal Stability of 4H- and 6H-SiC
• 4H- , 6H-SiC ノ アンテイセイ ニ オヨボス フジュンブツ アルミニウム ノ エイキョウ

抄録

The effect of doped aluminium on thermal stability of basic structures was studied experimentally in the range from 2000°C to 2400°C. The results were summarized as follows;<br>(1) The 4H type SiC was stabilized by aluminium, and it could be changed 4H to 6H and 6H to 4H by exclusion and inclusion of the aluminium respectively.<br>(2) The distortion of the lattice was caused by the aluminium and the stability of 4H structure in this temperature range was attributed to this distortion.<br>(3) The 15R type seemed to be unstable in these conditions.

収録刊行物

• 窯業協會誌

  窯業協會誌 78 (899), 224-228, 1970

  公益社団法人 日本セラミックス協会

詳細情報

• CRID: 1390001205247811456
• NII論文ID: 110002305872
• NII書誌ID: AN00245650
• DOI: 10.2109/jcersj1950.78.899_224
• ISSN: 18842127
• ISSN: 00090255
• NDL書誌ID: 8468332
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8468332
• Web Site: http://www.jstage.jst.go.jp/article/jcersj1950/78/899/78_899_224/_pdf
• 本文言語コード: ja
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可