β-SiCウイスカー中の積層欠陥

DOI 機関リポジトリ HANDLE Web Site Web Site

書誌事項

タイトル別名
  • Stacking Faults in β-SiC Whiskers
  • ベータ SiC ウイスカーチュウ ノ セキソウ ケッカン

この論文をさがす

抄録

β-SiC whiskers were grown at about 1300°C by the reaction of silicon powder and propylene in a flowing hydrogen atmosphere containing a few percent of hydrogen sulfide. The whiskers with the growth direction [111] were examined by TEM and SEM. Stacking faults observed in the whisker are classified into two types; one has the (111) fault plane perpendicular to the growth direction and the other has fault planes parallel to the (111), (111) and (111) which are not perpendicular to the growth direction. It is likely that these two types of faults have a correlation with the difference in morphology of whiskers. Their fault vector was shown to be 1/3‹111› by the g⋅b=0 criterion.

収録刊行物

  • 窯業協會誌

    窯業協會誌 94 (1092), 900-902, 1986

    公益社団法人 日本セラミックス協会

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ