Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots

• Masumoto Yasuaki

  Institute of Physics, University of Tsukuba

• Suto Fumitaka

  Institute of Physics, University of Tsukuba

• Ikezawa Michio

  Institute of Physics, University of Tsukuba

• Uchiyama Chikako

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi

• Aihara Masaki

  Graduate School of Materials Science, Nara Institute of Science and Technology

抄録

A highly sensitive heterodyne-detected photon echo enabled us to observe the signal from one layer of neutral self-assembled InP quantum dots under an electric field. The photon echo signal dramatically increased when charged InP quantum dots were neutralized with the application of negative electric bias. This fact suggests the hypothesis that charged quantum dots do not produce the photon echo. With the further increase of negative electric bias, photoluminescence was quenched and the photon echo decayed faster. The photon echo showed tunneling-induced dephasing and decayed nonexponentially, reflecting the non-Markovian nature of the tunneling process.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 74 (11), 2933-2936, 2005

  一般社団法人 日本物理学会

キーワード

• non-Markovian
• tunneling
• quantum dot
• InP
• photon echo
• dephasing

詳細情報

• CRID: 1390282679163211008
• NII論文ID: 110002325525
• NII論文ID: 210000105728
• NII論文ID: 130004539036
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.74.2933
• BIBCODE: 2005JPSJ...74.2933M
• ISSN: 13474073
• ISSN: 00319015
• NDL書誌ID: 7699478
• Web Site: http://id.ndl.go.jp/bib/7699478
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7699478
• Web Site: http://journals.jps.jp/doi/pdf/10.1143/JPSJ.74.2933
• 本文言語コード: en
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