STM Images of Surface Films Produced at Elevated Temperatures

• MATSUOKA Saburo

• MASUDA Hiroyuki

• IKEDA Yuji

• AKAIKE Kazuhiro

• OCHI Yasuo

抄録

The scanning tunneling microscope (STM) has an atomic-level resolution. Oxide film is always formed at elevated temperatures in air. Therefore, STM observation of surface films is useful for investigating the basic mechanisms of damage such as oxidation and creep at elevated temperatures. In this study, the oxide films on nickel and iron, and the sulfur-segregated surfaces on iron and SUS304 steel were observed with STM at room temperatures in air. The images of these films were obtained under a high bias voltage such as 2V, in comparison with ordinary voltage such as 20mV. This was justified by the fact that the films were semiconductors.

収録刊行物

• JSME international journal. Ser. 1, Solid mechanics, strength of materials

  JSME international journal. Ser. 1, Solid mechanics, strength of materials 35 (4), 456-461, 1992

  一般社団法人 日本機械学会

キーワード

• Damage Mechanics
• Fractography
• Scanning Tunneling Microscope
• Oxide Layer
• Elevated Temperature
• Semiconductor

詳細情報

• CRID: 1390282680409317632
• NII論文ID: 110002347709
• NII書誌ID: AA10680585
• DOI: 10.1299/jsmea1988.35.4_456
• ISSN: 09148809
• Web Site: https://www.jstage.jst.go.jp/article/jsmea1988/35/4/35_4_456/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可