溶液成長に於ける溶質場の安定性解析  [in Japanese] Analysis of Stability in the Solute Field during the Solution Growth  [in Japanese]

The authors have reported a critical gap length between two Si substrates at which the growth rate becomes zero during the solution growth. In this paper, the mechanism for explaining the abrupt change in the growth rate is proposed using the analysis of governing perturbation equations in the solute field. The results show that a non-dimensional parameter GrSc ∂c/∂y determines the stability in the solute field, and further instability which causes the flow in the solute field sets in at the critical gap length. This leads to the conclusion that the growth on the substrate does not take place because the solute diffusion in the solvent dominates below the critical gap length.

The authors have reported a critical gap length between two Si substrates at which the growth rate becomes zero during the solution growth. In this paper, the mechanism for explaining the abrupt change in the growth rate is proposed using the analysis of governing perturbation equations in the solute field. The results show that a non-dimensional parameter GrSc ∂c/∂y determines the stability in the solute field, and further instability which causes the flow in the solute field sets in at the critical gap length. This leads to the conclusion that the growth on the substrate does not take place because the solute diffusion in the solvent dominates below the critical gap length.