1427 シリコンウエハ薄膜形成における希薄ガス流動解析  [in Japanese] Rarefied gas flow analysis in thin film deposition on the silicon wafer  [in Japanese]

In the manufacturing process of the silicon semiconductor devices using the vertical low pressure CVD(Chemical Vapor Deposition) system, the film with nm order thickness is formed on the silicon wafer surface by the control of supply and chemical reaction of the raw material gas. It is very important to know how the supply gas flow and it diffuses on the water surface for the uniform thin film deposition in the low-pressure CVD. The purpose of this research is clarifying the flow of the reactant gas in the low pressure field by the flow visualization and numerical analysis. The result showed that the gas flow in the low pressure field becomes low-Reynolds-number flow and it behaves like the highly viscous fluid.