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Abstract
Estimation of sheath voltage distribution in asymmetric radio-frequency discharges is important because we can also obtain self-bias voltage which accelerates positive ions to target or wafer. We developed the numerical simulation code for estimation of the sheath voltage distribution and the self-bias voltage. We roughly approximate general asymmetric rf discharges to one-dimensional spherical ones. The results obtained by using our simulation code correspond with experimental results and can be explained theoretically.
Journal
- 年次大会講演論文集 : JSME annual meeting [List of Volumes]
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年次大会講演論文集 : JSME annual meeting 2003(6), 193-194, 2003-08-05 [Table of Contents]
The Japan Society of Mechanical Engineers