1441 Ar/HBr プラズマによるシリコンのエッチング特性  [in Japanese] Etching Characteristics of Silicon in Inductively-Coupled Ar/HBr Plasma  [in Japanese]

By use of an inductively-coupled plasma reactor for Ar/HBr gas, the effects of Ar/HBr mole fraction, biasing power, and gas pressure on the etch rate and the etch rate distribution are examined systematically. The etch rate strongly depends on the biasing power and the spatial uniformity of the etch rate becomes worse as the power increases. The etch rate by HBr plasma is smaller than that by Cl_2 plasma.