InSb基板中へのGa高速混入機構

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  • Mechanism of Rapid Diffusicn of Ga into Insb Substrate

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permeation mechanism of Ga Into an InSb substrate was Investlgated. The direct observation of the Ga incorporation on an InSb substrate clearly showed that the{111}planes appeared at the front of the layer and the InGaSb crystal was grown after the movement of liquid belt.

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