有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 : 組成不均一の発生(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)

• 桑野 範之

  九州大学大学院総合理工学研究科量子プロセス理工学専攻

• 滝 海

  九州大学大学院総合理工学研究科量子プロセス理工学専攻

• 沖 憲典

  九州大学大学院総合理工学研究科量子プロセス理工学専攻

• 川口 靖利

  名古屋大学大学院工学研究科電子工学専攻

• 平松 和政

  三重大学工学部電気電子工学科

• 澤木 宣彦

  名古屋大学大学院工学研究科電子工学専攻

書誌事項

タイトル別名

• Observation of Growth Process of InGaN Thick Layers Grown by Metalorganic Vapor Phase Epitaxy : Formation of Compositional Inhomogenuity(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors)
• 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察--組成不均一の発生
• ユウキ キンゾク キソウホウ デ サクセイシタ InGaN アツマク ノ セイ

抄録

Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick InGaN layers prepared by metalorganic vapor phase epitaxy. In the case of growth on GaN/LT-AlN/α-Al_2O_3 (0001) , a thin InGaN Layer of a good quality can grow with a smooth interface of InGaN/GaN and a smooth (0001) exterior surface. Threading dislocations in GaN penetrate into the InGaN layer and have a pit on each end on the exterior surface of InGaN. By development of the pits, the InGaN layer becomes to have a shape of pyramids with {11^^-01} facet planes. Thereafter, InGaN with a columnar structure is deposited on the pyramids. A two-layer-structure is thus made in the thick layer. Energy-dispersive x-ray spectroscopy (EDX) analysis has confirmed that the lower layer has a lower In content than in the upper one which has the equilibrium composition In_<0.2>Ga_<0.8>N. The lower In content is attributed to the lattice coherence with GaN, or "composition pulling effect". Small grains of InN have been recognized on the surface of the upper layer of InGaN. The grains keep a good lattice coherency with the InGaN layer. On LT-AlN/α-Al_2O_3 (0001) , InGaN with the equlibrium composition grows in a columnar structure. Inside the InGaN layer, domains of a lower In content have been recognized. The domains have a crystal orientation relationship with the matrix of InGaN. These results suggest that the lattice coherency has a strong effect on the formation of inhomogenous regions in InGaN alloys.

収録刊行物

• 日本結晶成長学会誌

  日本結晶成長学会誌 25 (2), 106-112, 1998

  日本結晶成長学会

詳細情報

• CRID: 1390282680840709504
• NII論文ID: 110002715024
• NII書誌ID: AN00188386
• DOI: 10.19009/jjacg.25.2_106
• ISSN: 21878366
• ISSN: 03856275
• HANDLE: 10076/8602
• NDL書誌ID: 4501667
• Web Site: https://mie-u.repo.nii.ac.jp/records/8213
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4501667
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • IRDB
  • NDL
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可