分子線エピタキシー法によるIII族窒化物のエピタキシャル成長(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)奥村,元

• 奥村 元

  電子技術総合研究所

書誌事項

タイトル別名

• Epitaxial Growth of III-Nitrides by Molecular Beam Epitaxy(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors)
• 分子線エピタキシー法による3族窒化物のエピタキシャル成長
• ブンシセン エピタキシーホウ ニヨル 3ゾク チッカブツ ノ エピタキシャル

抄録

Present status of III-nitride epitaxial growth technique by molecular beam epitaxy (MBE) is reviewed. Recent development of growth facilities including effective nitrogen sources have enabled us to obtain high growth rate, well-defined flat surfaces etc., which resuls in better understandings of growth mechanism and surface phenomena of III-nitrides. Owing to the understandings of these information on MBE growth of III-nitrides, the quality of MBE-grown III-nitride epilayers has been so much improved to be comparable to that of MOCVD-grown epilayers. Device application using MBE-grown III-nitride epilayers is also shown, and several problems to be solved in MBE are discussed.

収録刊行物

• 日本結晶成長学会誌

  日本結晶成長学会誌 25 (2), 113-125, 1998

  日本結晶成長学会

詳細情報

• CRID: 1390001205863998464
• NII論文ID: 110002715025
• NII書誌ID: AN00188386
• DOI: 10.19009/jjacg.25.2_113
• ISSN: 21878366
• ISSN: 03856275
• NDL書誌ID: 4501668
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4501668
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可