解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth

• Stoyanov S.

  Institute of Physical Chemistry, Bulgarian Academy of Sciences

• Metois J. J.

  CRMC2-CNRS, Campus de Luminy

• Tonchev V.

  Institute of Physical Chemistry, Bulgarian Academy of Sciences

書誌事項

タイトル別名

• Electromigration of Si Adatoms on Si Surfaces : A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth(<Special Issue>Recent Trend of Crystal Growth Theory)
• カイセツ Electromigration of Si Adatoms on Si Surface A key to understanding the step bunching instabilities during sublimation equilibrium and MBE growth

収録刊行物

• 日本結晶成長学会誌

  日本結晶成長学会誌 29 (1), 17-19, 2002

  日本結晶成長学会

詳細情報

• CRID: 1390282680873431168
• NII論文ID: 110002715516
• NII書誌ID: AN00188386
• DOI: 10.19009/jjacg.29.1_17
• ISSN: 21878366
• ISSN: 03856275
• NDL書誌ID: 6135086
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6135086
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • CiNii Articles