書誌事項
- タイトル別名
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- Deposition of SnO_2 Thin Film by Thermal CVD Furnace under Micro-Gravity(<Special Issue>Crystal Growth in Micro-Gravity)
- 微小重力環境下での熱CVD法によるSnO2薄膜堆積実験
- ビショウ ジュウリョク カンキョウ カ デ ノ ネツ CVDホウ ニ ヨル SnO2 ハクマク タイセキ ジッケン
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抄録
SnO_2 thin films were deposited by thermal Chemical Vapor Deposition (CVD) under micro-gravity (μg) utilizing parabolic flight of airplane and compared with films deposited under normal gravity (1g) environment. The films were deposited on Si substrates at the substrate temperature of 500℃ for 13seconds from the reactant gas of SnCl_4 and O_2 transported by Ar carrier gas It is found that SnO_2 thin film thickness deposited under μg is flatter than that under lg. The results were discussed with the carrier gas flow pattern obtained from the visualization experiment using a drop tower as well as the simulation calculation results by SIMPLE approximation.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 29 (4), 378-384, 2002
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680874227840
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- NII論文ID
- 110002715702
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6324808
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可