微小重力環境下での熱CVD法によるSnO_2薄膜堆積実験(<小特集>微小重力環境を利用した結晶成長)

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タイトル別名
  • Deposition of SnO_2 Thin Film by Thermal CVD Furnace under Micro-Gravity(<Special Issue>Crystal Growth in Micro-Gravity)
  • 微小重力環境下での熱CVD法によるSnO2薄膜堆積実験
  • ビショウ ジュウリョク カンキョウ カ デ ノ ネツ CVDホウ ニ ヨル SnO2 ハクマク タイセキ ジッケン

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抄録

SnO_2 thin films were deposited by thermal Chemical Vapor Deposition (CVD) under micro-gravity (μg) utilizing parabolic flight of airplane and compared with films deposited under normal gravity (1g) environment. The films were deposited on Si substrates at the substrate temperature of 500℃ for 13seconds from the reactant gas of SnCl_4 and O_2 transported by Ar carrier gas It is found that SnO_2 thin film thickness deposited under μg is flatter than that under lg. The results were discussed with the carrier gas flow pattern obtained from the visualization experiment using a drop tower as well as the simulation calculation results by SIMPLE approximation.

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