InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)

• 寒川 義裕

  東京農工大学工学部応用分子化学科

• 伊藤 智徳

  三重大学工学部物理工学科

• 熊谷 義直

  東京農工大学工学部応用分子化学科

• 纐纈 明伯

  東京農工大学工学部応用分子化学科

書誌事項

タイトル別名

• Influence of Lattice Constraint from Substrate on Relationship between Input Mole Ratio and Solid Composition of InGaN during MBE and MOVPE(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)
• InGaN気相成長における気相-固相関係に対する基板拘束の影響
• InGaN キソウ セイチョウ ニ オケル キソウ コソウカンケイ ニ タイスル キバン コウソク ノ エイキョウ

抄録

Thermodynamic analyses were performed to understand the influence of lattice constraint from InN and GaN substrates on the relationship between input mole ratio R_<In> (=P_<In>^0/ (P_<In>^0 + P_<Ga>^0), where P^0_i is the input partial pressure of element i) and solid composition x in In_xGa_<1-x>N during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). For the both growth methods, the calculation results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at higher temperatures while that for InGaN on InN can be seen at GaN-rich region due to the lattice constraint from the substrate. In case of the MOVPE, it is found that growth region of InGaN in the diagram related to V/III ratio and solid composition shrinks with increase of V/III ratio (increase of input partial pressure of NH_3). This is because the H_2 partial pressure produced by the decomposition of NH_3 increase at high V/III ratio (at high input partial pressure of NH_3).

収録刊行物

• 日本結晶成長学会誌

  日本結晶成長学会誌 30 (2), 104-110, 2003

  日本結晶成長学会

詳細情報

• CRID: 1390001205897866880
• NII論文ID: 110002715831
• NII書誌ID: AN00188386
• DOI: 10.19009/jjacg.30.2_104
• ISSN: 21878366
• ISSN: 03856275
• HANDLE: 10076/8501
• NDL書誌ID: 6620706
• Web Site: https://mie-u.repo.nii.ac.jp/records/8191
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6620706
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • IRDB
  • NDL
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可