誘導結合rfプラズマ支援マグネトロンスパッタ法によるギャップ用AIN膜の作製  [in Japanese] Preparation of AIN Films as Insulation Gap Layers for MR Heads by Magnetron Sputtering Enhanced with an Inductively Coupled rf Plasma  [in Japanese]

AIN films for use as insulative gap layers for MR or GMR heads were prepared by magnetron sputtering enhanced with an inductively coupled rf plasma at various substrate temperatures. AIN films deposited on substrates at room temperature were found to have amorphous structure and to possess poor corrosion resistance to hot water. On the other hand, AIN films prepared on 200℃ substrates were crystallized to some extent and displayed good corrosion resistance. All the AIN films, regardless of the substate temperature, behaved as insulators. The break down electric fields of the AIN films were all about 0.6 GV/m and leakage currents were about 10^<-8< A/mm^2 (10V). The AIN films prepared at 200℃ were concluded to be suitable for application in MR and GMR heads.