Al置換BaMフェライト薄膜の磁気特性  [in Japanese] Magnetic Characteristics of Al-substituted BaM Ferrite Films  [in Japanese]

    • 馮 潔 Feng J.
    • 東京工業大学工学部電子物理工学科 Department of Physical Electronics, Tokyo Institute of Technology
    • 渡部 康 Watanabe K.
    • 東京工業大学工学部電子物理工学科 Department of Physical Electronics, Tokyo Institute of Technology
    • 中川 茂樹 Nakagawa S.
    • 東京工業大学工学部電子物理工学科 Department of Physical Electronics, Tokyo Institute of Technology

    • 直江 正彦 Naoe M.
    • 東京工業大学工学部電子物理工学科 Department of Physical Electronics, Tokyo Institute of Technology

Abstract

Al-substituted Ba ferrite (Al-BaM) films with a composition of BaAl_xFe_<12-x>O_<19>(Al content x=0,1,2) were deposited on SiO_x/Si wafers with Pt seed layers. A postannealing process and high substrate temperature T_s are necessary to crystallize the films. With an increase of the Al content x in Al-BaM ferrite films, the saturation magnetization 4πM_s decreased, while perpendicular coercivity H_c⊥ increased, reaching over 3.3kOe. The perpendicular squareness ratio S_⊥ was increased to about 0.9 by substitution of Al for Fe. The Al-BaM ferrite films with suitable H_c⊥ and large S_⊥ prepared in this study may be applicable as perpendicular magnetic recording layers with low noise levels.

Journal

Journal of Magnetics Society of Japan   [List of Volumes]

Journal of Magnetics Society of Japan 23(4-2), 1213-1216, 1999-04-15  [Table of Contents]

The Magnetics Society of Japan (MSJ)

References:  4

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Cited by:  1

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Codes

  • NII Article ID (NAID) :
    110002810467
  • NII NACSIS-CAT ID (NCID) :
    AN0031390X
  • Text Lang :
    JPN
  • Article Type :
    Journal Article
  • ISSN :
    02850192
  • NDL Article ID :
    4695204
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z15-398
  • Databases :
    CJP  CJPref  NDL  NII-ELS