スパッタリング法によるMnSbエピタキシャル薄膜の作製 : 荷電粒子のエピタキシャル成長への影響  [in Japanese] Epitaxial Growth of MnSb Sputtered Films : Influence of Charged Particles of Epitaxial Growth  [in Japanese]

Ferromagnetic MnSb films were fabricated on Si(001), (110), and (111) single-crystal substrates by facing-target sputtering and conventional plannr sputtering. As a result, epitaxial growth of MnSb was realized by facing-target sputtering. However, it was not realized by plannar sputtering. According to the plasma diagnosis, this diffrence in epitaxial growth was caused either (1) by the damage of Si substrate and MnSb film by the bombardment of high energy electron and/or negative ion or (2) due to the lack of energy supply to MnSb clusters on substrate by the incidence of the positive ions so that MnSb clusters were restricted thus lattice matching to the Si single-crystal substrate. From these results, control of the energy and density of the charged particles was found to be very important for realizing epitaxial growth of MnSb sputtered films.