イオンビー・ムスパッタ法における反跳Arの鉄薄膜特性に及ぼす影響  [in Japanese] Effect of Recoiled Ar Ions on Magnetic Properties of Fe Films Deposited by Ion Beam Sputtering  [in Japanese]

Fe films were deposited by ion beam sputtering. The sputtering voltage V_S was set to 1200V. The angle θ_S between the normal line of the target plane and the normal line of the substrate plane was varied in the range of 10-80°. The θ_S dependence of the prperties of the Fe films and the average energy of the energetic particles, namely the sputtered atoms and the recoiled Arions were investigated in detail. The saturation magnetization 4πM_S of the films had an almost constant value of 21kG. The coercivity H_C took a minimum value of 3 Oe when θ_S was higher than 50°. It was estimated by Monte Carlo simulation that the average energy E_<Ar> of the recoiled Ar ions was approximately 300eV when θ_S was 50°. Bombardment with high-energy recoiled Ar ions improved the structure of the films and significantly reduced their coercivity. The angle of the substrate was an important parameter for the properties of films deposited by ion beam sputtering.