二重強磁性トンネル接合における電気伝導とTMR  [in Japanese] Transport Properties and TMR for Ferromangetic Tunnel Junctions with Double Barriers  [in Japanese]

Abstract

The transport properties and tunnel magnetoresistance (TMR) of ferromagnetic tunnel junctions with double barriers are investigated in the free-electron approximation. Tunnel currents are calculated on the basis of a Tsu-Esaki-type equation using exact transmission coefficients for the double junctions. Enhancement and oscillation of the tunnnel magnetoresistance occre as a function of the bias voltage. It is shown that these can be attributed to spin-dependent resonant tunneling through resonant states formed in the quantum well.

Journal

Journal of Magnetics Society of Japan   [List of Volumes]

Journal of Magnetics Society of Japan 23(4-2), 1273-1276, 1999-04-15  [Table of Contents]

The Magnetics Society of Japan (MSJ)

References:  10

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Cited by:  4

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Codes

  • NII Article ID (NAID) :
    110002810482
  • NII NACSIS-CAT ID (NCID) :
    AN0031390X
  • Text Lang :
    JPN
  • Article Type :
    Journal Article
  • ISSN :
    02850192
  • NDL Article ID :
    4695658
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z15-398
  • Databases :
    CJP  CJPref  NDL  NII-ELS