スパッタアルミナ障壁を用いた強磁性トンネル接合  [in Japanese] Ferromagnetic Tunnel Junctions with Sputtered Al_2O_3 Barriers  [in Japanese]

Abstract

Ferromagnetic tunnel junctions with sputtered Al_2O_3 barriers were fabricated. We found that the junction resistance increased exponentially as the Al_2O_3 barrier thickness increased, and that MR ratio of 3%-4% was achieved for a 14Å-20Å Al_2O_3 barrier. We obtained the barrier heght and thickness by fitting the I-V curves to Simmon's formula. The value of the barrier height ranged from 0.2 to 0.7 eV. In addition the barrier thickness dependence of the tunnel magnetoresistance was investigated on the basis of Slonczewski's theory.

Journal

Journal of Magnetics Society of Japan   [List of Volumes]

Journal of Magnetics Society of Japan 23(4-2), 1293-1295, 1999-04-15  [Table of Contents]

The Magnetics Society of Japan (MSJ)

References:  9

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Cited by:  2

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Codes

  • NII Article ID (NAID) :
    110002810487
  • NII NACSIS-CAT ID (NCID) :
    AN0031390X
  • Text Lang :
    JPN
  • Article Type :
    Journal Article
  • ISSN :
    02850192
  • NDL Article ID :
    4695690
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z15-398
  • Databases :
    CJP  CJPref  NDL  NII-ELS