オートバイアスとパルス負帰還による低消費電力形C-MOS MIセンサ  [in Japanese] Low Power Consumption C-MOS MI Sensor Utilizing Auto Bias and Pulse Feedback Technique  [in Japanese]

A low power consumption C-MOS MI sensor using auto bias and the pulse feedback technique is presented. The power consumption of the auto bias circuit, which is based on the asymmetrical MI effect of the amorphous wire, is less than 1 mW. ON the other hand, the power consumption of conventional bias circuits that generate dc magnetic fields is more than 10 mW. The pulse feedback technique is useful for reducing the power consumption of the negative feedback circuit. The technique is achieved by switching of a current that flows through feedback coils. The linearity of field detection for the auto bias and pulse feedback C-MOS MI sensor is 0.2%/FS for ±0.7 Oe. The power consumption of the whole circuit is about 12mW for dc 0.5 Oe detection.