NiFe/Co/Al2O3/Co/NiFe/FeMn接合のトンネル磁気抵抗効果
書誌事項
- タイトル別名
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- Ferromagnetic Tunneling Magnetoresistive Effect for NiFe/Co/Al2O3/Co/NiFe/FeMn Junctions
- NiFe Co Al2O3 Co NiFe FeMn セツゴウ ノ トンネル
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Spin-valve-type ferromagnetic tunneling junctions using contact metal masks were fabricated, and the annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) were investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions showed a spin-valve-like MR curve at room temperature. The effect of field annealing was investigated for two reasons: to increase the TMR ratio and: to create an orthogonal magnetic orientation in each of the two magnetic layers. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For the annealed junction, the TMR ratio decreases slightly with increasing temperature and decreases rapidly around 418 K, because of the disappearance of the exchange bias in the FeMn layer.
収録刊行物
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- 日本応用磁気学会誌
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日本応用磁気学会誌 22 (4_2), 561-564, 1998
公益社団法人 日本磁気学会
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詳細情報 詳細情報について
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- CRID
- 1390001205093873792
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- NII論文ID
- 110002811483
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- NII書誌ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
- http://id.crossref.org/issn/02850192
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- NDL書誌ID
- 4458093
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可