NiFe/Co/Al2O3/Co/NiFe/FeMn接合のトンネル磁気抵抗効果

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タイトル別名
  • Ferromagnetic Tunneling Magnetoresistive Effect for NiFe/Co/Al2O3/Co/NiFe/FeMn Junctions
  • NiFe Co Al2O3 Co NiFe FeMn セツゴウ ノ トンネル

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Spin-valve-type ferromagnetic tunneling junctions using contact metal masks were fabricated, and the annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) were investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions showed a spin-valve-like MR curve at room temperature. The effect of field annealing was investigated for two reasons: to increase the TMR ratio and: to create an orthogonal magnetic orientation in each of the two magnetic layers. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For the annealed junction, the TMR ratio decreases slightly with increasing temperature and decreases rapidly around 418 K, because of the disappearance of the exchange bias in the FeMn layer.

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