Sensitive Strain Gauge Using a CMOS IC Combined with an Amorphous Magnetostrictive Wire Cantilever Beam

• Shen L. P.

  Dept. of Electrical Eng., Nagoya Univ.

• Kita E.

  Dept. of Electrical Eng., Nagoya Univ.

• Naruse Y.

  Dept. of Electrical Eng., Nagoya Univ.

• Mohri K.

  Dept. of Electrical Eng., Nagoya Univ.

• Uchiyama T.

  Dept. of Electrical Eng., Nagoya Univ.

Bibliographic Information

Other Title

• アモルファス磁歪ワイヤ片持ちバリとCMOS ICによる高感度ひずみゲージ
• アモルファス ジワイ ワイヤ カタモチ バリ ト CMOS IC ニヨル コウ

Abstract

A highly sensitive linear strain gauge using a pair of amorphous CoSiB wires fixed to a plastic cantilever beam combined with a CMOS IC multivibrator circuit is presented. The wires are magnetized with a sharp pulse current to generate the stress impedance (SI) effect, showing a gauge factor of about 2000 in the CMOS IC circuit The linear strain gauge shows a resolution of about 2.5 mg for weight detection with high linearity in the range of −0.75∼1.25 g. The mechanism of the SI characteristics in the CoSiB wire is analyzed using a magnetization rotation model. Pulsation of fingertip blood vessels was stably detected by using the SI gauge stress sensor.

Journal

• Journal of the Magnetics Society of Japan

  Journal of the Magnetics Society of Japan 22 (4_2), 677-680, 1998

  The Magnetics Society of Japan

Keywords

• amorphous magnetostrictive wire
• skin effect
• stress-impedance (SI) effect
• CMOS multivibrator

Details

• CRID: 1390001205093788160
• NII Article ID: 110002811512
• NII Book ID: AN0031390X
• DOI: 10.3379/jmsjmag.22.677
• ISSN: 18804004
• ISSN: 02850192
• ISSN: http://id.crossref.org/issn/02850192
• NDL BIB ID: 4458122
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4458122
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10463930
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • NDL-Digital
  • CiNii Articles
• Abstract License Flag: Disallowed