書誌事項
- タイトル別名
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- Determination of trace impurities in sintered silicon carbide and silicon nitride by the pressure acid decomposition/ICP-AES.
- カアツ サン ブンカイ ユウドウ ケツゴウ プラズマ ハッコウ ブンセキホウ ニ
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抄録
Several sample decomposition methods were examined to determine trace impurities in sintered silicon carbide and silicon nitride. The pulverized samples were severely contaminated. A lump (about 0.15 g) of sintered silicon carbide sample was decomposed with a mixture of 5 ml of sulfuric acid+2.5 ml of nitric acid+2.5 ml of hydrofluoric acid in a Teflon pressure vessel at 230°C. Similarly about 0.3 g of sintered silicon nitride sample was decomposed with a mixture of 6 ml of nitric acid+4 ml of hydrofluoric acid at 170°C. The proposed methods were applied to some commercial samples, and the impurities were determined by ICP-AES.
収録刊行物
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- 分析化学
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分析化学 41 (12), T151-T156, 1992
公益社団法人 日本分析化学会
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詳細情報 詳細情報について
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- CRID
- 1390282679028095744
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- NII論文ID
- 110002906377
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- NII書誌ID
- AN00222633
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- COI
- 1:CAS:528:DyaK3sXhtVyit7s%3D
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- NDL書誌ID
- 3797075
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- ISSN
- 05251931
- http://id.crossref.org/issn/05251931
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可