光照射MESFETのモデリング  [in Japanese] Modeling of Illuminated MESFET  [in Japanese]

本論文は、光照射MESFETの特性を実験的に測定し、モデリングを行った結果について報告している。光照射MESFETの測定結果より、光照射時のトレイン電流I_<ds>増加及び出力コンダクタンスG_<ds>の増加と強い周波数依存性について言及し、得られた知見より、新しい光照射FETモデルを提唱し、その検証を行った。これにより、光制御されたMMIC発振器の設計に必要な基礎的データを得る事ができ、小型・安価・高効率な光ミリ波変換器を設計することが可能となった。

In this paper, measurement results of an illuminated MESFET characteristics and demonstration of the illuminated MESFET model are reported. Resulting from the measurement of the illuminated MESFET, it is observed that the drain current, Ids, increased on the I-V curve and the output conductance, Gds, also increased and showed strong frequency dependence. Based on these findings, a novel illuminated MESFET model was proposed and its consistence with the experimental data was investigated. From this consideration, fundamental data for a design of an illuminated MMIC oscillator were obtained and it seems to be possible to design a light-weighed, low-cost and high-efficient optical-millimeter wave transducer.