InPおよびGaInP混晶のGaP基板上へのLPE成長  [in Japanese] Growth of InP and GaInP alloy on GaP by liquid phase epitaxy  [in Japanese]

組成変換法によりGaP基板上に任意組成のGaAsP混晶を成長させることに成功している。この方法を用いてGaP基板上にGaInP混晶を得るために、まず始めにGaP基板上へのInPの直接成長を行い、格子不整が7.5%もあるにもかかわらず良好な成長層を得ることに成功した。引き続いてこのInP層上にGa-In-P溶液を一定温度で一定時間接触させて熱処理を行うことにより、全ての組成範囲においてInP層をGaInP混晶に変換でき、さらに変換は30分で完了することが明らかになった。

We had succeeded to grow GaAsP layers with a desired composition on GaP substrates by the compositional conversion technique. In order to grow GaInP alloy layers on GaP substrates by this technique, we carried out the growth of InP on GaP first. Fairly good InP layers were obtained, though there was 7.5% lattice-mismatch between InP and GaP. Afterwards, we can convert InP layers into GaInP alloy layers with any compositional range by contacting Ga-In-P solution with InP layer at a constant temperature for a constant time. It was cleared that the compositional conversion was completed in 30 minutes.