%A SHIMAMOTO, Hiromi
%A ONAI, Takahiro
%A OHUE, Eiji
%A TANABE, Masamichi
%A WASHIO, Katsuyoshi
%T High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
%J IEICE transactions on electronics
%0 Journal Article
%@ 09168524
%I 一般社団法人電子情報通信学会
%D 1999
%8 1999-11-25
%V 82
%N 11
%P 2007-2012
%U http://ci.nii.ac.jp/naid/110003211605/
%R