Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates

• KURAMATA Akiko

  Fujitsu Laboratories Ltd

• KUBOTA Shin-ichi

  Fujitsu Laboratories Ltd

• SOEJIMA Reiko

  Fujitsu Laboratories Ltd

• DOMEN Kay

  Fujitsu Laboratories Ltd

• HORINO Kazuhiko

  Fujitsu Laboratories Ltd

• HACKE Peter

  Fujitsu Laboratories Ltd

• TANAHASHI Toshiyuki

  Fujitsu Laboratories Ltd

抄録

We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3V, and the oscillation wavelength was 404.4nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25℃ was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of Sic substrates.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 83 (4), 546-551, 2000-04-25

  一般社団法人電子情報通信学会

キーワード

• GaN
• InGaN
• laser diodes
• SiC substrates
• continuous wave operation

詳細情報

• CRID: 1573105977302515712
• NII論文ID: 110003211869
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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