Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

• INOUE Takashi

  Photonic and Wireless Devices Research Labs., NEC Corp.

• ANDO Yuji

  Photonic and Wireless Devices Research Labs., NEC Corp.

• KASAHARA Kensuke

  Photonic and Wireless Devices Research Labs., NEC Corp.

• OKAMOTO Yasuhiro

  Photonic and Wireless Devices Research Labs., NEC Corp.

• NAKAYAMA Tatsuo

  Photonic and Wireless Devices Research Labs., NEC Corp.

• MIYAMOTO Hironobu

  Photonic and Wireless Devices Research Labs., NEC Corp.

• KUZUHARA Masaaki

  Photonic and Wireless Devices Research Labs., NEC Corp.

抄録

High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (L_g) of 0.07 μm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance R_S + R_D are properly taken into account. By applying the new scheme to a device with L_g = 0.25 μm, we obtained an effective high-field electron velocity of 1.75 × 10^7 cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 86 (10), 2065-2070, 2003-10-01

  一般社団法人電子情報通信学会

キーワード

• AlGaN
• GaN heterojunction FET
• short channel
• delay-time analysis
• series resistance
• electron high-field velocity

詳細情報

• CRID: 1572824502325480448
• NII論文ID: 110003214508
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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