Improved Boundary Element Method for Fast 3-D Interconnect Resistance Extraction

• WANG Xiren

  Dept. Computer Science & Technology, Tsinghua Univ.

• LIU Deyan

  Dept. Computer Engineering, UCSC

• YU Wenjian

  Dept. Computer Science & Technology, Tsinghua Univ.

• WANG Zeyi

  Dept. Computer Science & Technology, Tsinghua Univ.

抄録

Efficient extraction of interconnect parasitic parameters has become very important for present deep submicron designs. In this paper, the improved boundary element method (BEM) is presented for 3-D interconnect resistance extraction. The BEM is accelerated by the recently proposed quasi-multiple medium (QMM) technology, which quasicuts the calculated region to enlarge the sparsity of the overall coefficient matrix to solve. An un-average quasi-cutting scheme for QMM, advanced nonuniform element partition and technique of employing the linear element for some special surfaces are proposed. These improvements considerably condense the computational resource of the QMM-based BEM without loss of accuracy. Experiments on actual layout cases show that the presented method is several hundred to several thousand times faster than the well-known commercial software Raphael, while preserving the high accuracy.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 88 (2), 232-240, 2005-02-01

  一般社団法人電子情報通信学会

キーワード

• interconnect resistance
• fast extraction
• improved boundary element method

詳細情報

• CRID: 1570572702511642752
• NII論文ID: 110003215113
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
  • CiNii Articles