A design of novel _NV_T level shift circuits using MOSFET's

• HYOGO Akira

  Faculty of Science and Technology, Science University of Tokyo

• SEKINE Keitaro

  Faculty of Science and Technology, Science University of Tokyo

抄録

Two types of novel nV_T level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate V_<IN>+nV_T or V_<IN>-nV_T (where V_T is a threshold voltage), if the input voltage is applied as the V_<IN>. These circuits can be widely used in MOSFET characterization, compensating V_T effect, V_T measurement, level shifting, etc. Type 1 is directly derived from the nV_T-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.

収録刊行物

• IEICE Trans. Fundamentals

  IEICE Trans. Fundamentals 77 (2), 394-397, 1994

  一般社団法人電子情報通信学会

詳細情報

• CRID: 1571980077394712960
• NII論文ID: 110003215757
• NII書誌ID: AA10826239
• ISSN: 09168508
• 本文言語コード: en
• データソース種別:
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