A 350 - MS/s 3.3 - V 8 - bit CMOS D/A Converter Using a Delayed Driving Scheme
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- KOHNO Hiroyuki
- Mitsubishi Electric Corporation
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- NAKAMURA Yasuyuki
- Mitsubishi Electric Corporation
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- MIKI Takahiro
- Mitsubishi Electric Corporation
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- AMISHIRO Hiroyuki
- Mitsubishi Electric Corporation
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- OKADA Keisuke
- Mitsubishi Electric Corporation
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- SUMI Tadashi
- Mitsubishi Electric Corporation
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High-end graphic systems with 3 million pixels require 8-bit D/A converters with more than 300-MS/s conversion rate. Furthermore, D/A converters need to operate with low supply voltage when they are integrated with large-scale digital circuits on a half-micron CMOS process. This paper describes a 350-MS/s 8-bit CMOS D/A converter with 3.3-V power supply. A current source circuit with a delayed driving scheme is developed. This driving scheme reduces a fluctuation of internal node voltage of the current source circuit and high-speed switching is realized. In addition to this driving scheme, two stages of latches are inserted into matrix decoder for reducing glitch energy and for enhancing decoding speed. The D/A converter is fabricated in a 0.5-μm CMOS process with single poly-silicon layer and double aluminum layers. Its settling time is less than 2.4 ns and it successfully operates at 350 MS/s.
収録刊行物
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- IEICE transactions on fundamentals of electronics, communications and computer sciences
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IEICE transactions on fundamentals of electronics, communications and computer sciences 80 (2), 334-338, 1997-02-25
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詳細情報 詳細情報について
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- CRID
- 1571417127441565824
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- NII論文ID
- 110003216295
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- NII書誌ID
- AA10826239
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- ISSN
- 09168508
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles