Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

• Tsuboi Yoshiroh

  the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION

• Fiegna Claudio

  the DEIS, University of Bologna

• Sangiorgi Enrico

  the DEIS, University of Bologna

• Ricco Bruno

  the DEIS, University of Bologna

• Wada Tetsunori

  the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION

• Katsumata Yasuhiro

  the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION

• Iwai Hiroshi

  the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION

抄録

We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disapper. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 77 (2), 174-178, 1994-02-25

  一般社団法人電子情報通信学会

キーワード

• bipolar transistor
• i-layer
• collector signal delay
• velocity overshoot

詳細情報

• CRID: 1573387452131690624
• NII論文ID: 110003220320
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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