Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations

• PRIGGE Odin

  Siemens AG, Semiconductor Division

• SUETAKE Masami

  Department of Electrical Engineering, Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Department of Electrical Engineering, Hiroshima University

抄録

Fluctuations of three device parameters (T_ox, N_sub, ΔL) based on process fluctuations are taken as cause of device/circuit performances. In-line measured device parameters are approximated by Gaussian functions, and their 2σ values are assigned as boundaries of the performance fluctuations. Measured distributions both for device and curcuit performances are successfully reproduced.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 82 (6), 997-1002, 1999-06-25

  一般社団法人電子情報通信学会

キーワード

• MOSFET
• performance distribution 2σ
• analytical model

詳細情報

• CRID: 1570854177341812864
• NII論文ID: 110003220735
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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