An Equivalent MOSFET Cell Using Adaptively Biased Source-Coupled Pair

• SATO Hiroki

  Tokyo University of Science

• HYOUGO Akira

  Tokyo University of Science

• SEKINE Keitaro

  Tokyo University of Science

抄録

The square-law characteristics of MOSFET in the saturation region have a parameter of threshold voltageV_T. However, it introduces some complexities to the circuit design since it depends on kinds of MOS technology and cannot be controlled easily. In this paper, we show an equivalent MOSFET cell which has V_T-programming capability and some application instances based on it. The simulation is carried out using CMOS O.8★m n-well technology and the results have shown the feasibility of the proposed structure.

収録刊行物

• IEICE transactions on fundamentals of electronics, communications and computer sciences

  IEICE transactions on fundamentals of electronics, communications and computer sciences 86 (2), 357-363, 2003-02-01

  一般社団法人電子情報通信学会

キーワード

• MOS analog circuit
• threshold voltage
• source-coupled pair
• adaptively bias technique

詳細情報

• CRID: 1571135652317141760
• NII論文ID: 110003221093
• NII書誌ID: AA10826239
• ISSN: 09168508
• 本文言語コード: en
• データソース種別:
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