A Three-Mode Switched-LNA Using a Low Parasitic Capacitance MOSFET Switch

• NAKATANI Toshifumi

  Devices Development Center, Matsushita Electric Industrial Co., Ltd.

• OGAWA Koichi

  Devices Development Center, Matsushita Electric Industrial Co., Ltd.

• ITOH Junji

  RF-Semiconductor Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

• IMANISHI Ikuo

  RF-Semiconductor Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

抄録

A three-mode switched-LNA has been developed using a 0.25μm SiGe BiCMOS technology. The LNA features low noise figure (NF) performance, while achieving both low dissipation power and low distortion characteristics. The proposed MOSFET switch incorporating a newly developed switch circuit with a triple-well structure, which changes the LNA's mode, provides a parasitic capacitance of just 0.52 times that of a conventional MOSFET switch. This results in a significant NF improvement, by 0.16-0.33 dB, for the three-mode switched-LNA compared to a conventional LNA. Extensive studies of the MOSFET switch with regard to the structural parameters and the doping profiles are reported. Experimental results and the overall performance of a trial IC incorporating the three-mode switched-LNA are also given.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 86 (6), 1032-1040, 2003-06-01

  一般社団法人電子情報通信学会

キーワード

• low noise amplifier
• noise figure
• MOSFET switch
• parasitic capacitance
• 3rd-order intercept point
• dissipation power
• cross-modulation

詳細情報

• CRID: 1573105977154314496
• NII論文ID: 110003223538
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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