Analysis of Substrate Deep-Trap and Surface-State Effects on Turn-on Characteristics in GaAs MESFETs

• Otuka S.

  Faculty of Systems Engineering, Shibaura Institute of Technology

• Wakabayashi A.

  Faculty of Systems Engineering, Shibaura Institute of Technology

• Yamada T.

  Faculty of Systems Engineering, Shibaura Institute of Technology

• Horio K.

  Faculty of Systems Engineering, Shibaura Institute of Technology

Bibliographic Information

Other Title

• GaAs MESFETのターンオン特性に与える基板内トラップと表面準位の影響の解析

Journal

• Proceedings of the IEICE General Conference

  Proceedings of the IEICE General Conference 1998 (2), 91-, 1998-03-06

  The Institute of Electronics, Information and Communication Engineers

Details

• CRID: 1570854177364338688
• NII Article ID: 110003252382
• NII Book ID: AN10471452
• Text Lang: ja
• Data Source:
  • CiNii Articles