1.55-μm High-Speed Uni-Traveling-Carrier Photodiodes

• SHIMIZU Naofumi

  NTT System Electronics Laboratories

• WATANABE Noriyuki

  NTT System Electronics Laboratories

• FURUTA Tomofumi

  NTT System Electronics Laboratories

• ISHIBASHI Tadao

  NTT System Electronics Laboratories

• MIYAMOTO Yutaka

  NTT Optical Network Systems Laboratories

• HAGIMOTO Kazuo

  NTT Optical Network Systems Laboratories

Bibliographic Information

Other Title

• 超高速1.55ミクロン帯単一走行キャリア・フォトダイオード

Abstract

InP/InGaAs Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. The photoresponse of UTC-PDs is improved by incorporating a step-like potential profile in the photo-absorption layer. The observed peak electrical 3-dB bandwidth of 152 GHz is, to our knowledge, the largest among those reported for 1.55-μm wavelength photodiodes. The effect of the doping level in the photo-absorption layer was also studied. From the behavior of 3-dB bandwidths vs. output voltage, we found bandwidth enhancement as a result of the self-induced electric field in the photo-absorption layer. The error-free-operation of the optical receiver utilizing an UTC-PD is finally demonstrated at 40 Gb/s.

Journal

• Technical report of IEICE. OCS

  Technical report of IEICE. OCS 97 (358), 99-104, 1997-11-05

  The Institute of Electronics, Information and Communication Engineers

Keywords

• InP
• InGaAs
• heterostructure
• pin photodiode
• fiber-optic communication
• optical receiver

Details

• CRID: 1572543027291588096
• NII Article ID: 110003285464
• NII Book ID: AN10060797
• Text Lang: ja
• Data Source:
  • CiNii Articles