Sub-micron Etching Process by Transmitted Electron-Beam Excited Plasma Through Polymer Interface

• Shou Chunlin

  Center for Cooperative Research in Advanced Science and Technology, Nagoya University

• Inanami Ryouichi

  Center for Cooperative Research in Advanced Science and Technology, Nagoya University

• Morita Shinzo

  Center for Cooperative Research in Advanced Science and Technology, Nagoya University

Bibliographic Information

Other Title

• 高分子隔膜透過電子線励起プラズマによるサブミクロンエッチング加工

Abstract

The apparatus for electron-beam excited plasma(EBEP)processes with an interface of polymer films was developed,which is composed with a reactor and an electron-beam source vessel,which are separated by the polyester film of 1.5μm.The electron temperature in the plasma was measured to be 10〜14 eV by a probe-measurement.W hen styrene vapor was filled at a pressure of 0.2 Torr,polymerized film was deposited on the substrate,which was confirmed to contain polymerized styrene.But the polymer interface was abrated at the large electron-beam current of 100μA,and the abrated polymer was o bserved to be deposited on the substrate.In CF_4 gas,0.5μm lines o n mask resist were tranfered to Si wafer successfully by this process.

Journal

• Technical report of IEICE. OME

  Technical report of IEICE. OME 93 (406), 1-6, 1994-01-13

  The Institute of Electronics, Information and Communication Engineers

Keywords

• interface
• electron-beam excited plasm
• organic film
• process apparatus
• etching
• probe measurement

Details

• CRID: 1572543027327295616
• NII Article ID: 110003300844
• NII Book ID: AN10013334
• Text Lang: ja
• Data Source:
  • CiNii Articles