フリップチップ実装用40Gbps導波路型PD(光・電子デバイス実装、及びデバイス技術,一般)  [in Japanese] 40Gbps Waveguide Photodiode for flip-chip assembly  [in Japanese]

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Abstract

1.31μm/1.55μm帯兼用のフリップチップ実装用40Gbps導波路型PDの開発を行った。非対称導波路構造を用いることで,両波長帯に対して0.8A/W以上の高い感度が得られ,帯域も45GHz以上と良好であった。フリップチップ実装技術を用いて,ワイヤーの寄生インダクタンスを抑えたPDプリアンプモジュールを試作した結果,1.31μm,1.55μmの各入射光波長に対して,最小受信感度:-6.4dBm,-6.1dBmと両波長ともITU-T G693規格に準拠する特性が得られた。

We have developed 40Gbps waveguide-photodiode for flip-chip bonding. The high sensitivity over 0.8A/W has been realized by the asymmetric waveguide structure for 1.3μm and 1.55μm wavelength and high bandwidth over 45GHz has been obtained by Fe doped InP burying layer. PD-preamp modules fabricated flip-chip bonding technique, which can reduce the inductance of the bonding wire, have obtained the receiver sensitivity of -6.4dBm at 1.31μm and -6.1dBm at 1.55μm based on ITU-T G693

Journal

Technical report of IEICE. LQE   [List of Volumes]

Technical report of IEICE. LQE 104(270), 35-39, 2004-08-20  [Table of Contents]

The Institute of Electronics, Information and Communication Engineers

References:  2

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Codes

  • NII Article ID (NAID) :
    110003307018
  • NII NACSIS-CAT ID (NCID) :
    AN10442705
  • Text Lang :
    JPN
  • Article Type :
    ART
  • ISSN :
    09135685
  • NDL Article ID :
    7090680
  • NDL Source Classification :
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No. :
    Z16-940
  • Databases :
    CJP  NDL  NII-ELS