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抄録
高温で動作するIC(IIL)を開発するためにpn接合トランジスタの高温における特性を検討した。これをもとにIILの構造を設計し、低温エピタキシャル成長とイオン打ち込み装置を交互に繰り返す方法で試作した、10μmルールでのもので415℃まで、5μmルールのもので454℃まで動作し、これを用いた2ビットマイコン用フルアダーでは250℃にて4000時間以上の寿命を確認した。
In order to develop silicon lCs operating up to above 450£℃!,an Integrated Injection Logic (IIL) was chosen as an example.A new structure for the IIL was designed through experimental and theoretical studies of pn junctions and transistors at high temperatures.The maximum operating temperature was 454£℃! on the IIL made by 5£μm! designed rule.The newly designed IIL was fabric ated by newly developed combined processes of ion implantation and low temperature epitaxy.The developed IIL was fully operational from room temperature to 454£℃!,and the signal swing of a nine-st age ring oscillator was about 30£mV!at 454£℃!.The delay time of the IIL decreased to at most one-third of the previous device of 10£μm! rule for the same operating power at 50£℃!.Also,a full a dder of a 2-bit microcomputer was designed using the designed IIL The fabricated full adder operated normally from room temperature to 250£℃! and did not degrade in 4000£hours! at 250£℃!.
