Si_3N_4と金属界面における反応層成長に関する速度論的検討

• 中尾

  大阪大学

• 西本 和俊

  大阪大学

• 才田 一幸

  大阪大学

• 堅田 寛治

  (株)小松製作所

書誌事項

タイトル別名

• Kinetics of the Growth of Reaction Layer at the Bonding Interface of Si_3N_4 to Metal Joints : Study on Bonding of Heat-Resisting Fine Creamics (Report 8)

抄録

Kinetics of the reaction layer growth in Si_3N_4-W brazed joints was investigated using Cu-5%Cr, Cu-1%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr liquid insert metals. It was elucidated that the reaction layer growth could be expressed by Johnson-Mehl type equation with time exponent 'n' of 1/2. EPMA analysis of elements in the reaction layer revealed that Cr, Nb, V, Ti and Zr contents slightly decreased toward Si_3N_4,and that N content was almost constant. From the consideration of activation energy for reaction layer growth, it may be deduced that the reaction layer growth was controlled by diffusion of Cr, Nb, V, Ti and Zr in the reaction layer from the melted insert metal to Si_3N_4.

収録刊行物

• 溶接学会論文集

  溶接学会論文集 7 (4), 115-121, 1989

  社団法人溶接学会

キーワード

• Ceramics
• Silicon nitride
• Tungsten
• Ceramics-metal bonding
• Brazing
• Insert metal
• Copper-base alloys
• Reaction layer
• Growth kinetics
• Reaction diffusion
• Interfacial reaction
• Johnson-Mehl type equation
• Activation energy

詳細情報

• CRID: 1573387452183676928
• NII論文ID: 110003423013
• NII書誌ID: AN1005067X
• ISSN: 02884771
• 本文言語コード: ja
• データソース種別:
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