FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION

    • Kim Tae-Kyung
    • Division of Materials Science and Engineering, Seoul National University
    • Lee Byung-IlLee
    • Division of Materials Science and Engineering, Seoul National University
    • Kim Kwang-Ho
    • Division of Materials Science and Engineering, Seoul National University
    • Shin Jin-Wook
    • Division of Materials Science and Engineering, Seoul National University
    • Ahn Pyung-Soo
    • Division of Materials Science and Engineering, Seoul National University
    • Jeong Won-Cheol
    • Division of Materials Science and Engineering, Seoul National University
    • Joo Seung-Ki
    • Division of Materials Science and Engineering, Seoul National University

Abstract

Metal contamination free Poly-Si TFT's could be fabricated on the glass substrate at 450℃ by Metal Induced Lateral Crystallization (MILC) method. The channel area was laterally crystallized from the source and drain areas, where the thin film of nickel was deposited in a self aligned manner. Electrical activation of the source and drain could be achieved by annealing at 450℃ after the ion mass doping of phosphorus. The N-channel TFTs showed the mobility of 〜53cm^2/Vs, and the on/off current ratio was higher than 10^6

Journal

ITE Technical Report   [List of Volumes]

ITE Technical Report 21(10), 81-83, 1997-02-13  [Table of Contents]

The Institute of Image Information and Television Engineers

References:  3

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Codes

  • NII Article ID (NAID) :
    110003690385
  • NII NACSIS-CAT ID (NCID) :
    AN1059086X
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    13426893
  • Databases :
    CJP  NII-ELS