a-Si TFT的界面效應 Interfacial Effects on Characteristics of a-Si TFT

    • Zou X.
    • Department of Electronic Engineering, City University of Hong Kong
    • Webb D.P.
    • Department of Electronic Engineering, City University of Hong Kong
    • Chan Y.C.
    • Department of Electronic Engineering, City University of Hong Kong
    • Lam Y.W.
    • Department of Electronic Engineering, City University of Hong Kong
    • Xu Z.
    • Department of Solid State Electronics, Huazhong University of Science and Technology

Abstract

The concept of effective density of interface states at a-SiNx : H/a-Si : H interface has been used to analyse the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.

Journal

ITE Technical Report   [List of Volumes]

ITE Technical Report 21(10), 95-99, 1997-02-13  [Table of Contents]

The Institute of Image Information and Television Engineers

References:  3

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Codes

  • NII Article ID (NAID) :
    110003690388
  • NII NACSIS-CAT ID (NCID) :
    AN1059086X
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    13426893
  • Databases :
    CJP  NII-ELS