〓〓〓〓a-Si:H TFTs特性的影〓 EFFECT OF THE COMPENSATION LAYER ON THE PERFORMANCE OF A-SI : H TFTS

    • Zhang Shaoqiang
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Xu Zhongyang
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Zou Xuecheng
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Wang Changan
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Zhou Xuemei
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Zhao Bofang
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Dai Yongbin
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Wan Xinheng
    • Department of Solid State Electronics, Huazhong University of Science and Technology
    • Ding Hui
    • Department of Solid State Electronics, Huazhong University of Science and Technology

Abstract

A compensation layer was inserted in between active layer a-Si : H and passivation layer a-SiNx of a-Si : H TFTs in order to improve the quality of the interface. The dependence of the performances of the a-Si : H TFTs with the rf power of the hydrogen plasma treatment were experimentally investigated. The characteristics of the a-Si : H TFTs is improved by using an optimum rf power and introducing a special buffer layer.

Journal

ITE Technical Report   [List of Volumes]

ITE Technical Report 21(10), 101-105, 1997-02-13  [Table of Contents]

The Institute of Image Information and Television Engineers

References:  6

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Codes

  • NII Article ID (NAID) :
    110003690389
  • NII NACSIS-CAT ID (NCID) :
    AN1059086X
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    13426893
  • Databases :
    CJP  NII-ELS