5. 最近のトピックス 5.2 フッ素,塩素負イオン生成とSi, SiO_2とのエッチング反応 Recent Topics Generation of Fluorine and Chlorine Negative Ions and Etching Reaction with Si and SiO_2

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In order to neutralize positive charge built in high aspect ratio gaps and holes, a new etching method was studied employing alternate irradiation of positive ions and negative ions which were extracted from downstream plasma of SF_6 or Cl_2. As compared with easy generation of fluorine negative ions, chlorine negative ions were difficult to be produced even at high pressure and remote distance from a C12 plasma region. Thus, plasma space potential ( Vs) became negative in the case of SF_6 plasma, while Vs remained still positive in the case of Cl_2. However, values of Vs were limited to be less than 50 volt near a electrode biased to + 50 volt for increasing electrode area. Si etching characteristics carried out under positive and negative DC biasing demonstrated that Si etch rates by positive biasing were faster than those by negative biasing. In advance, SiO_2 and Ba (Sr) TiO_3 Were etched rapidly by using the condition including negative ions in contrast with slower etching with positive ions alone. This is likely due to a reduction reaction effect of negative ions. But more efforts should be made for making the effect clear.

収録刊行物

  • プラズマ・核融合学会誌 = Journal of plasma and fusion research

    プラズマ・核融合学会誌 = Journal of plasma and fusion research 72(11), 1168-1174, 1996-11-25

    社団法人プラズマ・核融合学会

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各種コード

  • NII論文ID(NAID)
    110003826633
  • NII書誌ID(NCID)
    AN10401672
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09187928
  • NDL 記事登録ID
    4085474
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-8
  • データ提供元
    CJP書誌  CJP引用  NDL  NII-ELS 
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