Effect of the Thermal Damage Introduced to GaAs Substrate during the GaAs, (AlGa)As LPE Process

• Horikoshi Yoshiji

  The Musashino Electrical Communication Laboratory, N.T.T.

• Saito Hideho

  The Musashino Electrical Communication Laboratory, N.T.T.

抄録

The effect of thermal damage introduced to the substrate surface during the LPE process was studied by photoluminescence (PL) observation at each step of the progressive etching of the epitaxial layers.<BR>There were many dark spots and dark regions on the substrate caused by the thermal damages. Most of them were not correlated with dark spots on the epitaxial layers. However, some of them were correlated with those on the epitaxial layers. The experimental result suggests that some threading dislocations of the epitaxial layers are originated at the damaged substrate surface.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 15 (5), 761-768, 1976

  社団法人応用物理学会

詳細情報

• CRID: 1571980077306642944
• NII論文ID: 110003895367
• NII書誌ID: AA00690800
• ISSN: 00214922
• 本文言語コード: en
• データソース種別:
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