Differential Photovoltage Spectra of Au-GaAs<SUB>1−<I>x</I></SUB>P<I><SUB>x</SUB></I> Schottky-Barrier Diodes

• Nishino Taneo

  Faculty of Engineering Science, Osaka University

• Nishizawa Hiroshi

  Faculty of Engineering Science, Osaka University

• Takakura Hideyuki

  Faculty of Engineering Science, Osaka University

• Hamakawa Yoshihiro

  Faculty of Engineering Science, Osaka University

抄録

Differential photovoltage measurements on Schottky-barrier diodes, formed by GaAs_1−xP_x crystals epitaxially-grown on GaAs substrate, indicate that the band-edge structure of GaAs_1−xP_x can be resolved as clearly as by other optical measurements. The direct transition edge and its spin-orbit split-off edge have been observed as sharp peaks in the whole composition range. For crystal composition x larger than 0.5, zero-phonon as well as momentum-conserving LA phonon-assisted free-exciton transitions have been observed with the same degree of sensitivity as a highly sensitive wavelength-modulated absorption technique. An additional structure, which is not yet identified, has been obtained just above the direct transition edge of GaAs_1−xP_x alloys in the direct-indirect crossover region (x\simeq0.45).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 15 (5), 807-812, 1976

  社団法人応用物理学会

詳細情報

• CRID: 1571980077306651136
• NII論文ID: 110003895374
• NII書誌ID: AA00690800
• ISSN: 00214922
• 本文言語コード: en
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