Dislocation Velocities in GaAs

• Choi Sun Keun

  Department of Physics, Faculty of Science, University of Tokyo

• Mihara Minoru

  Department of Physics, Faculty of Science, University of Tokyo

• Ninomiya Toshiyuki

  Department of Physics, Faculty of Science, University of Tokyo

抄録

Dislocation velocities in undoped n-type (n=1×10¹⁷ cm⁻³) and Zn-doped p-type (p=3×10¹⁸ cm⁻³) GaAs have been determined by the double-etch technique. In n-type GaAs, α dislocations are about 10² times faster than β dislocations; in p-type GaAs, β dislocations are about 2 to 10 times faster than α dislocations. The velocities of α dislocations in n- and p-type GaAs are roughly equal; the velocities of β dislocations in n-type GaAs are 10² to 10³ times smaller than in p-type GaAs. The velocity data can be well described by two theories: the abrupt kink model and the dragging point model. The stress dependence of the activation energy for dislocation motion is successfully described by the abrupt kink model.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 16 (5), 737-745, 1977

  The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1390282681245270016
• NII論文ID: 30021847180
• NII論文ID: 110003895893
• NII書誌ID: AA00690800
• DOI: 10.1143/jjap.16.737
• COI: 1:CAS:528:DyaE2sXktFCns74%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/16/i=5/a=737/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可