Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield

• Nakano Yoshiaki

  Department of Electronic Engineering, University of Tokyo

• Cao Hong-Li

  Department of Electronic Engineering, University of Tokyo

• Tada Kunio

  Department of Electronic Engineering, University of Tokyo

• Luo Yi

  Devices Laboratory, Yokogawa Electric Co., Ltd.

• Dobashi Machio

  Devices Laboratory, Yokogawa Electric Co., Ltd.

• Hosomatsu Haruo

  Devices Laboratory, Yokogawa Electric Co., Ltd.

抄録

Although gain-coupled (GC) distributed-feedback (DFB) lasers of the absorptive-grating type have several merits over those of gain-grating type, there have been disadvantages which include threshold increase due to excess absorption, parasitic index coupling, and nonlinear operation. In this paper we describe some new concepts to cope with these problems, namely, grating duty-factor optimization, a conduction-type inverted absorptive grating, and an anti-phase index grating. We have applied these schemes to GaAlAs/GaAs multiple-quantum-well (MQW) GC DFB lasers. Consequently, low threshold current, high slope efficiency, high side-mode suppression railo, narrow linewidth, and high single-mode yield have been achieved concurrently in as-cleaved devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (2), 825-829, 1993

  社団法人応用物理学会

キーワード

• distributed-feedback semiconductor laser
• gain-coupled DFB laser
• multiple quantum well
• gain coupling
• absorptive grating
• loss grating
• single-mode yield
• duty factor
• conduction-type inversion
• antiphase index grating

詳細情報

• CRID: 1573950402143758208
• NII論文ID: 110003899335
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
  • CiNii Articles